Thermal Imaging of Power MOSFETs under Thermal Runaway Conditions
Jack Shue and Henning Leidecker
The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one of the world’s most manufactured items, but making them better creates new problems. Older power MOSFETs would share internal power; newer ones grab the current, causing thermal runaway. Using a thermal camera and an oscilloscope to look at MOSFET internal voltage and current, we can gain an understanding of how a hot spot develops and better-predict when the problem will occur.
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